PART |
Description |
Maker |
IRGBC30UD2 |
600V Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRGBC20FD2 |
600V Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier Vectron International, Inc.
|
APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
IRG4BC30UD IRG4BC30UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
IRG4BC10UD IRG4BC10UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
Q6004L4V Q6008L5V Q6015L5V Q6004L3V Q6010L5V Q5008 |
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220AB TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB TRIAC|600V V(DRM)|15A I(T)RMS|TO-220AB TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB TRIAC|500V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 500V五(DRM)的| 8A条口(T)的有效值| TO - 220AB现有 TRIAC|800V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 800V的五(DRM)的| 8A条口T)的有效值| TO - 220AB现有 TRIAC|400V V(DRM)|4A I(T)RMS|TO-220AB 可控硅| 400V五(DRM)的| 4A条口(T)的有效值| TO - 220AB现有
|
Teridian Semiconductor, Corp. Littelfuse, Inc.
|
BUZ215-E3045 |
5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
SIEMENS AG Infineon Technologies AG
|
CYNB25-400 CYNA25-400 CYNA25-1000 |
SCR 25A 400V NON-ISOLAT TO-220AB 25 A, 400 V, SCR, TO-220AB SCR 25A 400V ISOLATED TO-220AB 25 A, 400 V, SCR, TO-220AB SCR 1000V 25A ISOLATED TO220AB 25 A, 1000 V, SCR, TO-220AB
|
Crydom, Inc. CRYDOM CORP
|
IRG4BC20F |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) 绝缘栅双极晶体管VCES和\u003d 600V电压的Vce(on)典\u003d 1.66V,@和VGE \u003d 15V的,集成电路\u003d 9.0,9.0
|
IRF[International Rectifier] International Rectifier, Corp.
|